A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Accurate description, understanding and control of the high temperature interface behavior between SiC single crystal liquid phase is critical for further development solution growth. The different parameters which create morphological instabilities, such as step bunching, micro-faceting solvent trapping, remain unclear because they are very difficult to address in experiments. We combined experiments numerical simulation design a specific sessile drop approach where removed before cooling down. advantage this method that it activates or suppresses solute (carbon) transport by an AC magnetic field thus separates physical–chemical hydrodynamic contributions. was demonstrated through observation evolution 4°off 4H-SiC (0001) surface contact with pure silicon at 1600 °C according time factor. Several parasitic effects were also analyzed suppressed order obtain well-controlled uniform interface.